N-channel single power MOSFET featuring 30V drain-source breakdown voltage and a maximum continuous drain current of 30A. Offers a low on-resistance of 8.2mΩ at a specific gate-source voltage and a maximum of 15.3mΩ. Designed for switching applications, this silicon MOSFET operates up to 150°C and is housed in a surface-mount LFPAK package with gull-wing terminals. It supports a peak reflow temperature of 260°C for up to 20 seconds and is RoHS compliant.
Renesas HAT2116H-EL-E technical specifications.
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