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Technical Specifications
Renesas HAT2119H-EL-E technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
5A
Drain Current-Max (ID)
5A
Drain-source On Resistance-Max
630mR
DS Breakdown Voltage-Min
250V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Operating Temperature
150°C
Moisture Sensitivity Level
1
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
20W
Pulsed Drain Current-Max (IDM)
20A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAT2119H-EL-E Datasheet
Download the complete datasheet for Renesas HAT2119H-EL-E to view detailed technical specifications.
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