This N-channel MOSFET features a maximum operating temperature of 150°C and a maximum drain current of 5A. It has a maximum drain-source on-resistance of 630mΩ and a maximum power dissipation of 20W. The device is packaged in a rectangular plastic package with a gull wing terminal form and is suitable for switching applications. It is compliant with RoHS and Reach SVHC regulations and has a moisture sensitivity level of 1.
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Renesas HAT2119H-EL-E technical specifications.
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain Current-Max (ID) | 5A |
| Drain-source On Resistance-Max | 630mR |
| DS Breakdown Voltage-Min | 250V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 20W |
| Pulsed Drain Current-Max (IDM) | 20A |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
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