N-channel single power MOSFET featuring 20V drain-source breakdown voltage and a maximum continuous drain current of 60A. Offers a low drain-source on-resistance of 5.8mΩ, enabling efficient switching applications. This surface-mount device utilizes METAL-OXIDE SEMICONDUCTOR FET technology on a silicon element, housed in a rectangular, small outline LFPAK package with gull-wing terminals. Maximum power dissipation is 30W, with a peak reflow temperature of 260°C for 20 seconds.
Renesas HAT2134H-EL-E technical specifications.
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