N-channel single power MOSFET featuring 20V drain-source breakdown voltage and a maximum continuous drain current of 60A. Offers a low drain-source on-resistance of 5.8mΩ, enabling efficient switching applications. This surface-mount device utilizes METAL-OXIDE SEMICONDUCTOR FET technology on a silicon element, housed in a rectangular, small outline LFPAK package with gull-wing terminals. Maximum power dissipation is 30W, with a peak reflow temperature of 260°C for 20 seconds.
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Technical Specifications
Renesas HAT2134H-EL-E technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
60A
Drain Current-Max (ID)
60A
Drain-source On Resistance-Max
5.8mR
DS Breakdown Voltage-Min
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e6
Max Operating Temperature
150°C
Moisture Sensitivity Level
1
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Peak Reflow Temperature (Cel)
260°C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
30W
Pulsed Drain Current-Max (IDM)
240A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
SINGLE
Time @ Peak Reflow Temperature-Max (s)
20s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAT2134H-EL-E Datasheet
Download the complete datasheet for Renesas HAT2134H-EL-E to view detailed technical specifications.
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