N-channel single power MOSFET featuring 100V drain-source breakdown voltage and a maximum continuous drain current of 15A. Offers a low drain-source on-resistance of 32mΩ, enabling efficient switching applications. This surface-mount device utilizes a rectangular, small outline package with gull-wing terminals and a plastic body. It supports a maximum power dissipation of 20W and a peak reflow temperature of 260°C for 20 seconds.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Renesas HAT2141H-EL-E datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 15A |
| Drain Current-Max (ID) | 15A |
| Drain-source On Resistance-Max | 32mR |
| DS Breakdown Voltage-Min | 100V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 20W |
| Pulsed Drain Current-Max (IDM) | 60A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
Download the complete datasheet for Renesas HAT2141H-EL-E to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
