N-channel single power MOSFET featuring 100V drain-source breakdown voltage and a maximum continuous drain current of 15A. Offers a low drain-source on-resistance of 32mΩ, enabling efficient switching applications. This surface-mount device utilizes a rectangular, small outline package with gull-wing terminals and a plastic body. It supports a maximum power dissipation of 20W and a peak reflow temperature of 260°C for 20 seconds.
Renesas HAT2141H-EL-E technical specifications.
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