The HAT2160H is a single N-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum drain current of 60A and a minimum breakdown voltage of 20V. The device features a maximum drain-source on resistance of 4.1 milliohms. The HAT2160H is packaged in a rectangular, small outline, LFPAK-5 package made of plastic. It is designed for surface mount and has a gull wing terminal form with a single terminal position. The transistor is suitable for switching applications and is made of silicon.
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Technical Specifications
Renesas HAT2160H technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (ID) | 60A |
| Drain-source On Resistance-Max | 4.1mR |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 240A |
| Qualification Status | Not Qualified |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas HAT2160H Datasheet
Download the complete datasheet for Renesas HAT2160H to view detailed technical specifications.
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