
N-channel single power MOSFET designed for switching applications. Features a 20V drain-source breakdown voltage and a maximum continuous drain current of 60A, with a pulsed drain current capability of 240A. Offers a low drain-source on-resistance of 4.1mΩ. Packaged in a rectangular, surface-mount LFPAK with gull-wing terminals, this silicon MOSFET operates up to 150°C and is RoHS compliant.
Renesas HAT2160H-EL-E technical specifications.
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