
N-channel single power MOSFET featuring 30V drain-source breakdown voltage and a maximum continuous drain current of 60A. This silicon MOSFET offers a low drain-source on-resistance of 4.4mΩ and a peak pulsed drain current of 240A. Designed for switching applications, it operates up to 150°C and is housed in a compact, rectangular LFPAK surface-mount package with gull-wing terminals. The component is RoHS compliant with tin terminal finish and a peak reflow temperature rating of 260°C for 20 seconds.
Renesas HAT2164H-EL-E technical specifications.
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