N-channel single power MOSFET featuring 30V drain-source breakdown voltage and a maximum continuous drain current of 60A. This silicon MOSFET offers a low drain-source on-resistance of 4.4mΩ and a peak pulsed drain current of 240A. Designed for switching applications, it operates up to 150°C and is housed in a compact, rectangular LFPAK surface-mount package with gull-wing terminals. The component is RoHS compliant with tin terminal finish and a peak reflow temperature rating of 260°C for 20 seconds.
Sign in to ask questions about the Renesas HAT2164H-EL-E datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Renesas HAT2164H-EL-E technical specifications.
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 60A |
| Drain Current-Max (ID) | 60A |
| Drain-source On Resistance-Max | 4.4mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 30W |
| Pulsed Drain Current-Max (IDM) | 240A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
Download the complete datasheet for Renesas HAT2164H-EL-E to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
