
N-channel single power MOSFET designed for switching applications. Features a 30V drain-source breakdown voltage and a maximum continuous drain current of 45A, with a pulsed drain current capability of 180A. Offers a low drain-source on-resistance of 6.1mΩ. Housed in a rectangular, small outline LFPAK package with gull-wing terminals for surface mounting. Operates up to 150°C and is RoHS compliant.
Renesas HAT2166H-EL-E technical specifications.
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