The HAT2168H is a single N-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum drain current of 30A and a minimum drain-source breakdown voltage of 30V. It features a maximum drain-source on resistance of 13.5mR and a pulsed drain current of 120A. The device is packaged in a rectangular small outline meter (SOM) package made of plastic and has a gull wing terminal form with a tin finish. It is not qualified and not RoHS compliant.
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Technical Specifications
Renesas HAT2168H technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 13.5mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 120A |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas HAT2168H Datasheet
Download the complete datasheet for Renesas HAT2168H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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