N-channel single power MOSFET featuring 30V drain-source breakdown voltage and a maximum continuous drain current of 30A. This component offers a low on-resistance of 7.9mΩ (typical) and a maximum of 13.5mΩ. Designed for switching applications, it supports a pulsed drain current up to 120A and has a maximum power dissipation of 15W. The MOSFET utilizes silicon for its element material and is housed in a rectangular, small outline LFPAK package with gull-wing terminals for surface mounting. It operates up to 150°C and is RoHS compliant.
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Technical Specifications
Renesas HAT2168H-EL-E technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
30A
Drain Current-Max (ID)
30A
Drain-source On Resistance-Max
13.5mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e6
Max Operating Temperature
150°C
Moisture Sensitivity Level
1
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Peak Reflow Temperature (Cel)
260°C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
15W
Pulsed Drain Current-Max (IDM)
120A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
SINGLE
Time @ Peak Reflow Temperature-Max (s)
20s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAT2168H-EL-E Datasheet
Download the complete datasheet for Renesas HAT2168H-EL-E to view detailed technical specifications.
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