N-channel single power MOSFET featuring 40V drain-source breakdown voltage and 40A continuous drain current. Offers a maximum on-resistance of 6mΩ and a pulsed drain current capability of 160A. Designed for switching applications, this silicon MOSFET operates up to 150°C with a maximum power dissipation of 25W. It is surface-mount compatible, housed in a rectangular LFPAK package with gull-wing terminals, and is RoHS compliant.
Renesas HAT2171H-EL-E technical specifications.
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