N-channel single power MOSFET designed for switching applications. Features a 40V drain-source breakdown voltage and a maximum continuous drain current of 30A, with a pulsed drain current up to 120A. Offers a low on-resistance of 9.2mΩ maximum. Housed in a rectangular, small outline LFPAK package with gull wing terminals, suitable for surface mounting. Operates up to 150°C with a peak reflow temperature of 260°C for 20 seconds.
Sign in to ask questions about the Renesas HAT2172H-EL-E datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Renesas HAT2172H-EL-E technical specifications.
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 30A |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 9.2mR |
| DS Breakdown Voltage-Min | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e4 |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 20W |
| Pulsed Drain Current-Max (IDM) | 120A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Gold |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
Download the complete datasheet for Renesas HAT2172H-EL-E to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.