N-channel MOSFET for switching applications, featuring a maximum drain current of 30A and a low drain-source on-resistance of 9.5mR. This component offers a drain-source breakdown voltage of 40V and a maximum power dissipation of 20W. Encased in a rectangular, plastic small outline package with gull wing terminals, it is designed for surface mounting. Operating up to 150°C, it is RoHS compliant.
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Technical Specifications
Renesas HAT2172N-EL-E technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
30A
Drain Current-Max (ID)
30A
Drain-source On Resistance-Max
9.5mR
DS Breakdown Voltage-Min
40V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G5
Max Operating Temperature
150°C
Moisture Sensitivity Level
1
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Peak Reflow Temperature (Cel)
260°C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
20W
Pulsed Drain Current-Max (IDM)
120A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
20s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAT2172N-EL-E Datasheet
Download the complete datasheet for Renesas HAT2172N-EL-E to view detailed technical specifications.
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