N-channel MOSFET for switching applications, featuring a maximum drain current of 30A and a low drain-source on-resistance of 9.5mR. This component offers a drain-source breakdown voltage of 40V and a maximum power dissipation of 20W. Encased in a rectangular, plastic small outline package with gull wing terminals, it is designed for surface mounting. Operating up to 150°C, it is RoHS compliant.
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Technical Specifications
Renesas HAT2172N-EL-E technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 30A |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 9.5mR |
| DS Breakdown Voltage-Min | 40V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G5 |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 20W |
| Pulsed Drain Current-Max (IDM) | 120A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas HAT2172N-EL-E Datasheet
Download the complete datasheet for Renesas HAT2172N-EL-E to view detailed technical specifications.
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