N-Channel MOSFET with a maximum drain current of 25A (pulsed to 100A) and a minimum drain-source breakdown voltage of 100V. This surface-mount component features a small outline rectangular plastic package with gull wing terminals and gold finish, suitable for switching applications. It operates up to 150°C with a maximum power dissipation of 30W and a peak reflow temperature of 260°C for 20 seconds. RoHS compliant and moisture sensitive level 1.
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Technical Specifications
Renesas HAT2173N-EL-E technical specifications.
General
Drain Current-Max (Abs) (ID)
25A
Drain Current-Max (ID)
25A
DS Breakdown Voltage-Min
100V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e4
Max Operating Temperature
150°C
Moisture Sensitivity Level
1
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Peak Reflow Temperature (Cel)
260°C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
30W
Pulsed Drain Current-Max (IDM)
100A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Gold
Terminal Form
Gull Wing
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
20s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAT2173N-EL-E Datasheet
Download the complete datasheet for Renesas HAT2173N-EL-E to view detailed technical specifications.
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