
N-Channel MOSFET, designed for switching applications. Features a 100V drain-source breakdown voltage and a maximum continuous drain current of 15A. Offers a low drain-source on-resistance of 46mΩ. Packaged in a rectangular, surface-mount LFPAK with gull-wing terminals and tin finish. Operates up to 150°C with a peak reflow temperature of 260°C for 20 seconds.
Renesas HAT2175H-EL-E technical specifications.
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