The HAT2183WP-EL-E is a single N-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum operating temperature of 150°C. It features a maximum drain current of 20A and a maximum drain-source on resistance of 64mΩ. The device is packaged in a rectangular shape with a small outline meter style and is suitable for switching applications. The HAT2183WP-EL-E is RoHS compliant and suitable for surface mount. It can withstand a peak reflow temperature of 260°C for up to 20 seconds.
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Renesas HAT2183WP-EL-E technical specifications.
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 20A |
| Drain Current-Max (ID) | 20A |
| Drain-source On Resistance-Max | 64mR |
| DS Breakdown Voltage-Min | 150V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 30W |
| Pulsed Drain Current-Max (IDM) | 40A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | No Lead |
| Terminal Position | DUAL |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
No datasheet is available for this part.
