The HAT2195R is a surface mount N-channel MOSFET with a continuous drain current rating of 18A and a drain to source voltage rating of 30V. It has a maximum power dissipation of 2.5W and a maximum operating temperature of 150°C. The device is packaged in a SOIC package and is available in quantities of 2500 per reel. The HAT2195R is not radiation hardened and contains lead, making it non-lead free. It has an input capacitance of 3.4nF and a turn-on delay time of 12ns.
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Renesas HAT2195R technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.4nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 5.8mR |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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