N-channel single power MOSFET featuring 30V drain-source breakdown voltage and a maximum continuous drain current of 14A. Offers a low drain-source on-resistance of 14mΩ. Designed for switching applications, this component utilizes METAL-OXIDE SEMICONDUCTOR FET technology on a silicon element. Packaged in a rectangular, surface-mount SMALL OUTLINE package (SOP8) with gull wing terminals, it supports a maximum operating temperature of 150°C and is RoHS compliant.
Renesas HAT2198R-EL-E technical specifications.
| Drain Current-Max (Abs) (ID) | 14A |
| Drain Current-Max (ID) | 14A |
| Drain-source On Resistance-Max | 14mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e4 |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 2.5W |
| Pulsed Drain Current-Max (IDM) | 112A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Nickel |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
No datasheet is available for this part.
