N-channel single power MOSFET featuring 30V drain-source breakdown voltage and 11A maximum drain current. This surface-mount component offers a low 16.5mΩ drain-source on-resistance and a maximum power dissipation of 2W. Designed for switching applications, it utilizes METAL-OXIDE SEMICONDUCTOR FET technology and is housed in a rectangular, plastic SOP8 package with gull-wing terminals. Operating up to 150°C, this RoHS-compliant component is suitable for reflow soldering with a peak temperature of 260°C for 20 seconds.
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Technical Specifications
Renesas HAT2199R-EL-E technical specifications.
General
Drain Current-Max (Abs) (ID)
11A
Drain Current-Max (ID)
11A
Drain-source On Resistance-Max
25mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Max Operating Temperature
150°C
Moisture Sensitivity Level
1
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Peak Reflow Temperature (Cel)
260°C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2W
Pulsed Drain Current-Max (IDM)
88A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
20s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAT2199R-EL-E Datasheet
Download the complete datasheet for Renesas HAT2199R-EL-E to view detailed technical specifications.
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