
N-channel Silicon Power MOSFET, dual dual drain configuration, featuring a 30V drain-source voltage and continuous drain current of 7.5A/8A. This surface-mount component is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads, measuring 4.9mm x 3.95mm x 1.5mm (Max). Key electrical characteristics include a maximum drain-source resistance of 24mOhm at 10V and a typical gate charge of 4.6nC at 4.5V. Operating temperature range spans from -55°C to 150°C.
Renesas HAT2210RJ-EL-E technical specifications.
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