N-channel Silicon Power MOSFET, dual dual drain configuration, featuring a 30V drain-source voltage and continuous drain current of 7.5A/8A. This surface-mount component is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads, measuring 4.9mm x 3.95mm x 1.5mm (Max). Key electrical characteristics include a maximum drain-source resistance of 24mOhm at 10V and a typical gate charge of 4.6nC at 4.5V. Operating temperature range spans from -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Renesas HAT2210RJ-EL-E technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
4.9
Package Width (mm)
3.95
Package Height (mm)
1.5(Max)
Seated Plane Height (mm)
1.75(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Jedec
MS-012AA
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20@Mos 1|±12@Mos 2V
Maximum Continuous Drain Current
7.5@Mos 1|8@Mos 2A
Material
Si
Maximum Drain Source Resistance
24@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
630@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Renesas HAT2210RJ-EL-E Datasheet
Download the complete datasheet for Renesas HAT2210RJ-EL-E to view detailed technical specifications.
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