N-channel Silicon Power MOSFET, dual dual drain configuration, featuring a 30V drain-source voltage and continuous drain current of 7.5A/8A. This surface-mount component is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads, measuring 4.9mm x 3.95mm x 1.5mm (Max). Key electrical characteristics include a maximum drain-source resistance of 24mOhm at 10V and a typical gate charge of 4.6nC at 4.5V. Operating temperature range spans from -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Renesas HAT2210RJ-EL-E technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP |
| Package Description | Plastic Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 3.95 |
| Package Height (mm) | 1.5(Max) |
| Seated Plane Height (mm) | 1.75(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | MS-012AA |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20@Mos 1|±12@Mos 2V |
| Maximum Continuous Drain Current | 7.5@Mos 1|8@Mos 2A |
| Material | Si |
| Maximum Drain Source Resistance | 24@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 630@10VpF |
| Maximum Power Dissipation | 1500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Renesas HAT2210RJ-EL-E Datasheet
Download the complete datasheet for Renesas HAT2210RJ-EL-E to view detailed technical specifications.
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