N-channel single power MOSFET featuring a 60V drain-source breakdown voltage and a maximum continuous drain current of 2.5A. This silicon transistor offers a low drain-source on-resistance of 119mΩ. Designed for switching applications, it utilizes METAL-OXIDE SEMICONDUCTOR FET technology and is housed in a rectangular, surface-mount CMFPAK6 (R-PDSO-F6) plastic package. It operates up to 150°C and is RoHS compliant with tin terminal finish.
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Technical Specifications
Renesas HAT2240C-EL-E technical specifications.
General
Drain Current-Max (Abs) (ID)
2.5A
Drain Current-Max (ID)
2.5A
Drain-source On Resistance-Max
119mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-F6
JESD-609 Code
e6
Max Operating Temperature
150°C
Moisture Sensitivity Level
1
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Peak Reflow Temperature (Cel)
260°C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
900mW
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Flat
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
20s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAT2240C-EL-E Datasheet
Download the complete datasheet for Renesas HAT2240C-EL-E to view detailed technical specifications.
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