This device is a silicon N-channel power MOSFET for power switching applications. It is rated for 30 V drain-to-source voltage and 55 A continuous drain current, with LFPAK packaging and support for 4.5 V gate drive. The MOSFET provides low on-resistance of 2.5 mΩ typical at 10 V gate drive and 3.4 mΩ typical at 4.5 V gate drive. Typical switching and charge characteristics include 33 nC total gate charge, 13 ns turn-on delay, 65 ns rise time, 60 ns turn-off delay, and 9.5 ns fall time. The device is specified to 150 °C channel temperature and is marked lead free.
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Renesas HAT2265H technical specifications.
| Transistor Type | N-Channel Power MOSFET |
| Drain to Source Voltage | 30V |
| Gate to Source Voltage | ±20V |
| Continuous Drain Current | 55A |
| Pulsed Drain Current | 220A |
| Avalanche Current | 30A |
| Avalanche Energy | 90mJ |
| Power Dissipation | 30W |
| Thermal Resistance Junction to Case | 4.17°C/W |
| Maximum Junction Temperature | 150°C |
| Storage Temperature Range | -55 to 150°C |
| Gate Threshold Voltage | 1.6 to 2.5V |
| On Resistance @ VGS=10V | 2.5 typ, 3.3 maxmΩ |
| On Resistance @ VGS=4.5V | 3.4 typ, 5.3 maxmΩ |
| Forward Transfer Admittance | 60 min, 100 typS |
| Input Capacitance | 5180 typpF |
| Output Capacitance | 1200 typpF |
| Reverse Transfer Capacitance | 380 typpF |
| Total Gate Charge | 33 typnC |
| Gate to Source Charge | 15 typnC |
| Gate to Drain Charge | 7.1 typnC |
| Turn-On Delay Time | 13 typns |
| Rise Time | 65 typns |
| Turn-Off Delay Time | 60 typns |
| Fall Time | 9.5 typns |
| Body-Drain Diode Forward Voltage | 0.81 typ, 1.06 maxV |
| Body-Drain Diode Reverse Recovery Time | 40 typns |
| Lead Free | Yes |
