The HAT2267H-EL-E is a single N-channel MOSFET with a maximum drain current of 25A and on-resistance of 21mR. It has a minimum breakdown voltage of 80V and a maximum power dissipation of 25W. This device is packaged in a lead-free LFPAK-4 package and is suitable for switching applications. The HAT2267H-EL-E is qualified to RoHS and SVHC standards and is suitable for use in high-temperature environments up to 150°C.
Checking distributor stock and pricing after the page loads.
Renesas HAT2267H-EL-E technical specifications.
| Drain Current-Max (Abs) (ID) | 25A |
| Drain Current-Max (ID) | 25A |
| Drain-source On Resistance-Max | 21mR |
| DS Breakdown Voltage-Min | 80V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 25W |
| Pulsed Drain Current-Max (IDM) | 100A |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
No datasheet is available for this part.
