The HAT2279H-EL-E is a single N-channel metal-oxide semiconductor MOSFET with a maximum drain current of 30A and a maximum drain-source on resistance of 15mR. It has a minimum breakdown voltage of 80V and a maximum power dissipation of 25W. The device is packaged in a rectangular flange mount LFPAK-4 package made of plastic and features gull wing terminals. It is qualified for surface mount and has a moisture sensitivity level of 1. The HAT2279H-EL-E is compliant with RoHS and Reach SVHC regulations and has a maximum operating temperature of 150°C.
Renesas HAT2279H-EL-E technical specifications.
| Drain Current-Max (Abs) (ID) | 30A |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 15mR |
| DS Breakdown Voltage-Min | 80V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 25W |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
No datasheet is available for this part.
