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Technical Specifications
Renesas HAT2279N-EL-E technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
30A
Drain Current-Max (ID)
30A
Drain-source On Resistance-Max
15.3mR
DS Breakdown Voltage-Min
80V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G5
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
25W
Pulsed Drain Current-Max (IDM)
120A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAT2279N-EL-E Datasheet
Download the complete datasheet for Renesas HAT2279N-EL-E to view detailed technical specifications.
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