The HAT2279N-EL-E is a single N-channel metal-oxide semiconductor FET with a maximum drain current of 30A and a maximum drain-source on resistance of 15.3 milliohms. It has a minimum breakdown voltage of 80V and a maximum power dissipation of 25W. The device is packaged in a SMALL OUTLINE, R-PDSO-G5 package and is suitable for switching applications. It is qualified to RoHS and Reach SVHC compliant. The operating temperature range is -40°C to 150°C.
Renesas HAT2279N-EL-E technical specifications.
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 30A |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 15.3mR |
| DS Breakdown Voltage-Min | 80V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G5 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 25W |
| Pulsed Drain Current-Max (IDM) | 120A |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
No datasheet is available for this part.
