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Technical Specifications
Renesas HAT2285WP-EL-E technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
22A
Drain Current-Max (ID)
14A
Drain-source On Resistance-Max
40mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-N6
Max Operating Temperature
150°C
Number of Elements
2
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
15W
Pulsed Drain Current-Max (IDM)
56A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
No Lead
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAT2285WP-EL-E Datasheet
Download the complete datasheet for Renesas HAT2285WP-EL-E to view detailed technical specifications.
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