N-channel, P-channel dual MOSFET transistor for switching applications. Features a maximum drain current of 5A, 84mΩ drain-source on-resistance, and a minimum drain-source breakdown voltage of 60V. Operates up to 150°C with a maximum power dissipation of 3W. This surface-mount component utilizes metal-oxide semiconductor FET technology and is housed in a rectangular, small outline plastic package with gull wing terminals. RoHS compliant with tin terminal finish.
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Renesas HAT3008R-EL-E technical specifications.
| Drain Current-Max (Abs) (ID) | 5A |
| Drain Current-Max (ID) | 5A |
| Drain-source On Resistance-Max | 84mR |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | N-CHANNEL, P-CHANNEL |
| Power Dissipation-Max (Abs) | 3W |
| Pulsed Drain Current-Max (IDM) | 40A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
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