Dual N-channel and P-channel MOSFET transistor for switching applications. Features a 60V drain-source breakdown voltage and maximum drain currents of 6A (ID) and 5A (ID-Abs). Offers a low 45mΩ maximum drain-source on-resistance. Operates up to 150°C with a peak reflow temperature of 260°C for 20 seconds. Packaged in an 8-pin SOP (R-PDSO-G8) with gull wing terminals, suitable for surface mounting. RoHS compliant.
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Renesas HAT3010R-EL-E technical specifications.
| Drain Current-Max (Abs) (ID) | 5A |
| Drain Current-Max (ID) | 6A |
| Drain-source On Resistance-Max | 45mR |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | N-CHANNEL, P-CHANNEL |
| Power Dissipation-Max (Abs) | 3W |
| Pulsed Drain Current-Max (IDM) | 48A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
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