The HD2L3N-T1-AZ is a single NPN bipolar junction transistor with a minimum DC current gain of 200 and a maximum collector current of 1A. It has a maximum power dissipation of 2W and is manufactured with SILICON material. The transistor is designed for surface mount applications and is compliant with RoHS and Reach SVHC regulations.
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| DC Current Gain-Min (hFE) | 200 |
| Max Collector Current | 1A |
| Number of Elements | 1 |
| Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 2W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
