Automotive-grade half-bridge MOSFET driver with 100V/2A peak current capability. Features TTL logic inputs for high-frequency operation. Operates across a -40°C to 125°C temperature range. Housed in an 8-terminal, 3.9mm x 4.89mm R-PDSO-G8 package. Designed for supply voltages from 9V to 14V.
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Technical Specifications
Renesas HIP2101EIBZT technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 8 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G8 |
| Width | 3.9 |
| Length | 4.89 |
| Pin Count | 8 |
| Number of Functions | 1 |
| Temperature Grade | AUTOMOTIVE |
| Supply Voltage-Nom | 12 |
| Supply Voltage-Min | 9 |
| Supply Voltage-Max | 14 |
| Interface IC Type | HALF BRIDGE BASED MOSFET DRIVER |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8542.39.00.01 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Renesas HIP2101EIBZT Datasheet
Download the complete datasheet for Renesas HIP2101EIBZT to view detailed technical specifications.
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