8K x 8 EEPROM memory IC with 100ns maximum access time. Features 65536 bits density, 3V programming voltage, and operates from 2.7V to 5.5V supply voltage. This CMOS technology component offers data polling, ready/busy functionality, and a 10-year minimum data retention time. Packaged in a 28-pin small outline plastic (SOP) package with gull wing terminals and a 1.27mm terminal pitch, it is designed for surface mounting.
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Technical Specifications
Renesas HN58V65AFP-10 technical specifications.
General
| Access Time-Max | 100ns |
| Command User Interface | No |
| Data Polling | Yes |
| Data Retention Time-Min | 10 |
| Density | 65536b |
| Height - Seated (Max) | 2.5mm |
| JESD-30 Code | R-PDSO-G28 |
| JESD-609 Code | e0 |
| Length | 18.3mm |
| Max Operating Temperature | 70°C |
| Max Supply Current | 25mA |
| Memory Type | EEPROM, |
| Memory Width | 8 |
| Min Operating Temperature | 0°C |
| Number of Functions | 1 |
| Number of Words | 8192 |
| Number of Words Code | 8K |
| Organization | 8KX8 |
| Package Body Material | Plastic |
| Package Code | SOP |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Page Size | 64Words |
| Parallel/Serial | PARALLEL |
| Power Supplies | 3/5V |
| Programming Voltage | 3V |
| Qualification Status | Not Qualified |
| Ready/Busy | Yes |
| RoHS Compliant | No |
| Standby Current-Max | 5uA |
| Supply Voltage-Max (Vsup) | 5.5V |
| Supply Voltage-Min (Vsup) | 2.7V |
| Supply Voltage-Nom (Vsup) | 3.3V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Pitch | 1.27mm |
| Terminal Position | DUAL |
| Toggle Bit | Yes |
| Width | 8.4mm |
| Write Cycle Time-Max (tWC) | 10ms |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas HN58V65AFP-10 Datasheet
Download the complete datasheet for Renesas HN58V65AFP-10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.