8K x 8 EEPROM memory IC with 100ns maximum access time. Features 3V programming voltage and 3V/5V power supplies, operating from 2.7V to 5.5V. CMOS technology, DIP-28 package with through-hole mounting and 2.54mm terminal pitch. Includes data polling and toggle bit functionality, with a maximum standby current of 5uA. Commercial temperature grade, RoHS compliant.
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Technical Specifications
Renesas HN58V65AP-10E technical specifications.
General
Access Time-Max
100ns
Command User Interface
No
Data Polling
Yes
Density
65536b
Height - Seated (Max)
5.7mm
JESD-30 Code
R-PDIP-T28
JESD-609 Code
e6
Length
35.6mm
Max Operating Temperature
70°C
Max Supply Current
25mA
Memory Type
EEPROM,
Memory Width
8
Min Operating Temperature
0°C
Number of Functions
1
Number of Words
8192
Number of Words Code
8K
Organization
8KX8
Package Body Material
Plastic
Package Code
DIP
Package Equivalence Code
DIP28,.6
Package Shape
Rectangular
Package Style
IN-LINEMeter
Page Size
64Words
Parallel/Serial
PARALLEL
Power Supplies
3/5V
Programming Voltage
3V
Qualification Status
Not Qualified
Ready/Busy
Yes
RoHS Compliant
Yes
Standby Current-Max
5uA
Supply Voltage-Max (Vsup)
5.5V
Supply Voltage-Min (Vsup)
2.7V
Supply Voltage-Nom (Vsup)
3.3V
Surface Mount
No
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
Tin
Terminal Form
Through Hole
Terminal Pitch
2.54mm
Terminal Position
DUAL
Toggle Bit
Yes
Width
15.24mm
Write Cycle Time-Max (tWC)
10ms
Compliance
RoHS
Compliant
Datasheet
Renesas HN58V65AP-10E Datasheet
Download the complete datasheet for Renesas HN58V65AP-10E to view detailed technical specifications.
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