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Technical Specifications
Renesas HSU277 technical specifications.
General
| Diode Capacitance-Max | 1.2pF |
| Diode Element Material | SILICON |
| Diode Type | MIXER |
| Forward Voltage-Max (VF) | 1V |
| Frequency Band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
| JESD-30 Code | R-PDSO-G2 |
| Max Operating Temperature | 60°C |
| Max Power Dissipation | 150mW |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Qualification Status | Not Qualified |
| Rep Pk Reverse Voltage-Max | 35V |
| Surface Mount | Yes |
| Technology | PLANAR DOPED BARRIER |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas HSU277 Datasheet
Download the complete datasheet for Renesas HSU277 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.