The HVU131TRF-E is a SILICON PIN diode with a maximum breakdown voltage of 60V and a maximum power dissipation of 150mW. It has a diode capacitance of 0.8pF and a forward resistance of 1R. The diode is packaged in a small outline rectangular plastic package with a tin finish and gull wing terminals. It is RoHS compliant and suitable for surface mount applications.
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Renesas HVU131TRF-E technical specifications.
| Application(s) | SWITCHING |
| Diode Capacitance-Max | 0.8pF |
| Diode Element Material | SILICON |
| Diode Forward Resistance-Max | 1R |
| Diode Type | PIN |
| JESD-30 Code | R-PDSO-G2 |
| JESD-609 Code | e6 |
| Min Breakdown Voltage | 60V |
| Max Power Dissipation | 150mW |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| RoHS | Compliant |
No datasheet is available for this part.
