The HZK4BTR-S-E is a single zener diode with a nominal reference voltage of 3.9V and a maximum voltage tolerance of 5.13%. It has a maximum power dissipation of 500mW and operates up to 175°C. The diode is isolated and has a dynamic impedance of 100R. It is not RoHS compliant and is not suitable for surface mount applications.
PolarityUnidirectional
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Technical Specifications
Renesas HZK4BTR-S-E technical specifications.
General
| Case Connection | Isolated |
| Diode Element Material | SILICON |
| Diode Type | ZENER |
| Dynamic Impedance-Max | 100R |
| JESD-30 Code | O-LELF-R2 |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 500mW |
| Max Reverse Current | 5uA |
| Number of Elements | 1 |
| Package Body Material | Glass |
| Package Shape | Round |
| Package Style | LONG FORMMeter |
| Polarity | Unidirectional |
| Reference Voltage-Nom | 3.9V |
| Reverse Test Voltage | 1V |
| RoHS Compliant | No |
| Surface Mount | No |
| Technology | ZENER |
| Terminal Form | WRAP AROUND |
| Terminal Position | END |
| Voltage Tol-Max | 5.13% |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas HZK4BTR-S-E Datasheet
Download the complete datasheet for Renesas HZK4BTR-S-E to view detailed technical specifications.
No datasheet is available for this part.