The HZS3A1TD is a unidirectional silicon zener diode with a maximum operating temperature of 200°C. It features a power dissipation of 0.4W and is packaged in a 2-pin axial DO-34 package. The diode element is made of silicon and has a polarity of unidirectional. It is suitable for use in high-temperature applications.
Renesas HZS3A1TD technical specifications.
| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-34 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | ZENER DIODE |
| Power Dissipation-Max | 0.4 |
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
