N-channel MOSFET transistor designed for switching applications. Features a 60V drain-source breakdown voltage and a maximum continuous drain current of 30A, with a pulsed drain current capability of 60A. Offers a low drain-source on-resistance of 36mR. This isolated TO-220AB packaged component operates up to 150°C and has an avalanche energy rating of 12.5mJ. RoHS compliant and constructed with silicon.
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Technical Specifications
Renesas N0600N-S17-AY technical specifications.
General
| Avalanche Energy Rating (Eas) | 12.5mJ |
| Case Connection | Isolated |
| Drain Current-Max (Abs) (ID) | 30A |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 36mR |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 20W |
| Pulsed Drain Current-Max (IDM) | 60A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | No |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas N0600N-S17-AY Datasheet
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