PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter voltage and 0.3A maximum DC collector current. Housed in a 3-pin SOT-23F package with a flat lead shape, measuring 2.9mm x 2mm x 0.88mm (max). Offers a minimum DC current gain of 30 at 300mA and 2V, with a typical transition frequency of 110MHz. Operating temperature range from -55°C to 150°C.
PackageSOT-23F
MountingSurface Mount
Quick Jump:
Technical Specifications
Renesas N0800R-T1-AT technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package/Case
SOT-23F
Package Description
Small Outline Transistor
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
2
Package Height (mm)
0.88(Max)
Seated Plane Height (mm)
0.85
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
80V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
80V
Maximum DC Collector Current
0.3A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
30@300mA@2V
Maximum Transition Frequency
110(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Renesas N0800R-T1-AT Datasheet
Download the complete datasheet for Renesas N0800R-T1-AT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.