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Technical Specifications
Renesas NE3210S01-T1B technical specifications.
General
Case Connection
SOURCE
Drain Current-Max (Abs) (ID)
70mA
Drain Current-Max (ID)
15mA
DS Breakdown Voltage-Min
3V
FET Technology
HETERO-JUNCTION
Highest Frequency Band
KU BAND
JESD-609 Code
e0
Max Operating Temperature
125°C
Number of Elements
1
Package Body Material
Plastic
Package Style
MICROWAVEMeter
Peak Reflow Temperature (Cel)
230°C
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
165mW
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
UNSPECIFIED
Time @ Peak Reflow Temperature-Max (s)
30s
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas NE3210S01-T1B Datasheet
Download the complete datasheet for Renesas NE3210S01-T1B to view detailed technical specifications.
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