The NE3503M04 is a single N-channel HETERO-JUNCTION RF transistor with a minimum breakdown voltage of 3V and a maximum operating temperature of 125°C. It has a maximum power dissipation of 125mW and is available in a SUPER MINIMOLD, M04, 4 PIN package. The transistor is suitable for amplifier applications and is made from silicon material. It is not qualified and is not RoHS compliant.
Renesas NE3503M04 technical specifications.
| Drain Current-Max (Abs) (ID) | 70mA |
| Drain Current-Max (ID) | 15mA |
| DS Breakdown Voltage-Min | 3V |
| FET Technology | HETERO-JUNCTION |
| Highest Frequency Band | KU BAND |
| JESD-609 Code | e0 |
| Max Operating Temperature | 125°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 125mW |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Flat |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| RoHS | Not Compliant |
No datasheet is available for this part.
