The NE3508M04-A is a single N-channel heterojunction FET with a maximum drain current of 30mA and a minimum breakdown voltage of 3V. It features a rectangular package made of plastic and has a maximum power dissipation of 175mW. The device is suitable for amplifier applications and is compliant with RoHS and Reach SVHC regulations. It can operate at a maximum temperature of 150°C and is available in a small outline package style.
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Technical Specifications
Renesas NE3508M04-A technical specifications.
General
| Additional Feature | LOW NOISE |
| Case Connection | DRAIN |
| Drain Current-Max (ID) | 30mA |
| DS Breakdown Voltage-Min | 3V |
| FET Technology | HETERO-JUNCTION |
| Highest Frequency Band | S BAND |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 175mW |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Flat |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.