The NE3510M04-T2-A is an N-channel GaAs RF transistor with a minimum breakdown voltage of 3V and maximum drain current of 30mA. It has a maximum power dissipation of 125mW and operates at a maximum temperature of 150°C. The transistor is packaged in a SMALL OUTLINE package with a plastic body and flat terminals in a dual position. It is compliant with RoHS and Reach SVHC regulations and is suitable for amplifier applications.
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| Case Connection | DRAIN |
| Drain Current-Max (ID) | 30mA |
| DS Breakdown Voltage-Min | 3V |
| FET Technology | JUNCTION |
| Highest Frequency Band | S BAND |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 125mW |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Flat |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | GALLIUM ARSENIDE |
| RoHS | Compliant |
