Renesas
NE4210S01-T1B
N-Channel HETERO-JUNCTION RF Transistor, 3V 15mA, KU BAND, MICROWAVEMeter Package
The NE4210S01-T1B is a single N-channel HETERO-JUNCTION RF transistor with a minimum breakdown voltage of 3V and a maximum drain current of 15mA. It is designed for use in KU BAND applications and is packaged in a MICROWAVEMeter style package made of plastic. The transistor is RoHS compliant and Reach SVHC compliant. It has a maximum operating temperature of 125°C and a peak reflow temperature of 230°C. The terminal finish is gold and the terminal form is gull wing.
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Technical Specifications
Renesas NE4210S01-T1B technical specifications.
General
| Case Connection | SOURCE |
| Drain Current-Max (ID) | 15mA |
| DS Breakdown Voltage-Min | 3V |
| FET Technology | HETERO-JUNCTION |
| Highest Frequency Band | KU BAND |
| JESD-609 Code | e4 |
| Max Operating Temperature | 125°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Style | MICROWAVEMeter |
| Peak Reflow Temperature (Cel) | 230°C |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Gold |
| Terminal Form | Gull Wing |
| Terminal Position | UNSPECIFIED |
| Time @ Peak Reflow Temperature-Max (s) | 30s |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NE4210S01-T1B Datasheet
Download the complete datasheet for Renesas NE4210S01-T1B to view detailed technical specifications.
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