The NE5520279A is a single N-channel RF transistor with a maximum drain current of 1A and a minimum breakdown voltage of 6V. It features a metal-oxide semiconductor FET technology and is suitable for amplifier applications. The device is available in a MICROWAVEMeter package shape with a rectangular style and is surface mountable. The NE5520279A is not qualified and is not RoHS compliant, but is Reach SVHC compliant.
Checking distributor stock and pricing after the page loads.
| Case Connection | SOURCE |
| Drain Current-Max (ID) | 1A |
| DS Breakdown Voltage-Min | 6V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | L BAND |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Package Shape | Rectangular |
| Package Style | MICROWAVEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Flat |
| Terminal Position | QUAD |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| RoHS | Not Compliant |
