The NE5520379A-A is a single N-channel RF transistor with a maximum drain current of 1.5A and a minimum breakdown voltage of 3.8V. It is packaged in a MICROWAVEMeter style, a rectangular package shape. The transistor is suitable for amplifier applications and is made from silicon material. It is RoHS compliant and Reach SVHC compliant.
Renesas NE5520379A-A technical specifications.
| Case Connection | SOURCE |
| Drain Current-Max (ID) | 1.5A |
| DS Breakdown Voltage-Min | 3.8V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | L BAND |
| JESD-609 Code | e6 |
| Number of Elements | 1 |
| Package Shape | Rectangular |
| Package Style | MICROWAVEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Flat |
| Terminal Position | QUAD |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
No datasheet is available for this part.
