This N-Channel MOSFET has a maximum operating temperature of 125°C and a maximum power dissipation of 20W. It features a maximum drain current of 1.5A and is manufactured using metal-oxide semiconductor technology. The device is RoHS compliant and suitable for surface mount applications.
Renesas NE5520379A-T1A-A technical specifications.
| Drain Current-Max (Abs) (ID) | 1.5A |
| Drain Current-Max (ID) | 1.5A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 125°C |
| Number of Elements | 1 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 20W |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
