The NE58219-T1-A is a single NPN transistor with a minimum DC current gain of 60 and a maximum collector current of 60mA. It can withstand a maximum power dissipation of 100mW and operates within a temperature range of -40°C to 125°C. This surface mount transistor is compliant with RoHS regulations and is suitable for various applications.
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Technical Specifications
Renesas NE58219-T1-A technical specifications.
General
| DC Current Gain-Min (hFE) | 60 |
| Max Collector Current | 60mA |
| Max Operating Temperature | 125°C |
| Number of Elements | 1 |
| Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 100mW |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Transition Frequency-Nom (fT) | 3GHz |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NE58219-T1-A Datasheet
Download the complete datasheet for Renesas NE58219-T1-A to view detailed technical specifications.
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