S BAND, GaAs, N-CHANNEL, RF POWER, MESFET, LEAD FREE, 3M, 2 PIN
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| Case Connection | SOURCE |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain Current-Max (ID) | 5A |
| DS Breakdown Voltage-Min | 10V |
| FET Technology | METAL SEMICONDUCTOR |
| Highest Frequency Band | S BAND |
| JESD-609 Code | e0 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Metal |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 33W |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Flat |
| Terminal Position | DUAL |
| Transistor Element Material | GALLIUM ARSENIDE |
| RoHS | Not Compliant |
