The NE85619-T1 is a single NPN transistor with a maximum collector current of 100mA and a maximum collector-emitter voltage of 12V. It operates at a maximum temperature of 150°C and has a transition frequency of 4.5GHz. The transistor is made of silicon and has a collector-base capacitance of 1.5pF. It is available in a small outline package made of plastic with a rectangular shape and gull wing terminals. The transistor is suitable for amplifier applications.
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Technical Specifications
Renesas NE85619-T1 technical specifications.
General
| Collector-base Capacitance-Max | 1.5pF |
| Collector-emitter Voltage-Max | 12V |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code | R-PDSO-G3 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | NPN |
| Qualification Status | Not Qualified |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 4.5GHz |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas NE85619-T1 Datasheet
Download the complete datasheet for Renesas NE85619-T1 to view detailed technical specifications.
No datasheet is available for this part.