Renesas
NESG2101M05-T1
NPN RF Transistor, 5V Collector-emitter Voltage, 100mA Collector Current, 17GHz Transition Frequency
The NESG2101M05-T1 is a single NPN RF transistor from Renesas with a maximum collector-emitter voltage of 5V and a maximum collector current of 100mA. It features a low noise characteristic and a high DC current gain of 130. The transistor is qualified for surface mount and has a maximum power dissipation of 500mW. It operates within a temperature range of -40°C to 150°C and is compliant with RoHS and Reach SVHC regulations.
Quick Jump:
Technical Specifications
Renesas NESG2101M05-T1 technical specifications.
General
| Additional Feature | LOW NOISE |
| Collector-base Capacitance-Max | 0.5pF |
| Collector-emitter Voltage-Max | 5V |
| DC Current Gain-Min (hFE) | 130 |
| Highest Frequency Band | L BAND |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 500mW |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Flat |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transition Frequency-Nom (fT) | 17GHz |
Compliance
| RoHS | Compliant |
Datasheet
Renesas NESG2101M05-T1 Datasheet
Download the complete datasheet for Renesas NESG2101M05-T1 to view detailed technical specifications.
No datasheet is available for this part.